STUDYING THE FORMATION MECHANISMS OF NiSi2 NANOLAYER FORMED ON THE SURFACE AND SUBSURFACE LAYER OF Si SINGLE CRYSTAL BY SOLID PHASE EPITAXY METHOD

Abstract

In this monograph, a lot of attention is paid to identifying the mechanisms of formation of nano-sized MeSi2 structures in the surface and subsurface layers of Si and their extraction, as well as to determining their composition, structure and physical properties. Epitaxial films occupy the most important place in the use of film materials in the field of electronics. The interest and importance of studying the properties of such films is that films are used in the production of large and very large integrated circuits, in the creation of laser devices, in the production of high and ultra-high frequency resonators, solar cells, and in general in the production of the most modern and unique microelectronic devices. plays a role. It forms the basis of future electronics, i.e. nanoelectronics.